logo
Dayoo Advanced Ceramic Co.,Ltd
상품
상품
> 상품 > 탄화규소계 세라믹스 > Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces

Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces

제품 세부 정보

원래 장소: 중국

브랜드 이름: Dayoo

지불 및 배송 조건

최소 주문 수량: 맞춤형

가격: CNY

포장 세부 사항: 패키지

배달 시간: 60 일

공급 능력: 공장

가장 좋은 가격 을 구하라
강조하다:

silicon carbide ceramics thermal shock resistance

,

high temperature stability silicon carbide ceramics

,

semiconductor crystal growth furnace ceramics

탄성 계수:
300-330 Gpa
가공 서비스:
맞춤형 처리
콘텐츠:
99% sic
재료:
탄화규소 (SiC)
밀도:
3.1 - 3.2G/cm³
화학적 무력성:
높은
마모 저항:
훌륭한
제품 양식:
디스크 롤
굴곡강도:
300 - 550MPa
제조방법:
소결, 반응결합, 핫 프레싱
이점:
높은 온도 저항성
굽힘 강도:
450 Mpa
마이크론:
150
품질 관리:
100% 검사
특징:
고온 저항
탄성 계수:
300-330 Gpa
가공 서비스:
맞춤형 처리
콘텐츠:
99% sic
재료:
탄화규소 (SiC)
밀도:
3.1 - 3.2G/cm³
화학적 무력성:
높은
마모 저항:
훌륭한
제품 양식:
디스크 롤
굴곡강도:
300 - 550MPa
제조방법:
소결, 반응결합, 핫 프레싱
이점:
높은 온도 저항성
굽힘 강도:
450 Mpa
마이크론:
150
품질 관리:
100% 검사
특징:
고온 저항
Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces
Silicon Carbide Ceramics for Semiconductor Crystal Growth Furnaces
Product Overview

Silicon Carbide (SiC) Precision Ceramics are high-performance industrial ceramic materials manufactured using high-purity SiC powder (purity ≥ 98%) through advanced forming and high-temperature sintering processes. These materials provide exceptional thermal shock resistance, high temperature stability, and strong corrosion resistance, making them essential components for high-end industrial thermal equipment operating in extreme conditions from 1600-1900°C.

Core Applications
  • High-Temperature Furnace Linings: Suitable for SiC sintering furnaces, vacuum/atmosphere sintering furnaces, glass melting kilns, and hazardous waste incinerators, providing high-temperature and corrosion-resistant inner lining protection
  • Thermocouple Protection Tubes: Used in semiconductor crystal growth furnaces, metal melting furnaces, and cemented carbide sintering furnaces, ensuring accurate operation of temperature measurement elements under reducing/inert atmospheres
Product Advantages
  • High-Temperature Resistance: Decomposition temperature >2500°C under atmospheric pressure; flexural strength at 1400°C remains over 70% of room temperature strength
  • Thermal Shock Resistance: Thermal expansion coefficient of 4.3-4.5×10⁻⁶/K, capable of withstanding sudden temperature fluctuations >500°C
  • Corrosion and Wear Resistance: Resistant to strong acids (except hydrofluoric acid), molten metals, and slag erosion; hardness ranges from 2400-2600 kg/mm²
  • Precision and Stability: High forming accuracy; pressureless sintered products achieve density ≥98%; excellent thermal conductivity (104-200 W/m*K)
Technical Specifications
Item Indicator
SiC Content ≥98%
Density 3.02-3.10 g/cm³
Maximum Operating Temperature 1900°C
Thermal Expansion Coefficient (25°C) 4.3×10⁻⁶/K
Flexural Strength (Room Temperature) ≥395 MPa
Hardness (HV) 2400-2600 kg/mm²
Porosity ≤0.1 vol% (Reaction Sintered)
Manufacturing Process

Raw Material Pretreatment (Purification → Ball Milling) → Forming (Isostatic Pressing / Slip Casting / Extrusion) → High-Temperature Sintering (1400-2200°C) → Precision Machining (Grinding → Polishing) → Performance Testing (Strength / Corrosion Resistance Testing) → Finished Product Packaging

Usage Instructions
  • Clean contact surfaces before installation to ensure no impurities
  • Avoid sudden cooling or heating; heating/cooling rates should be ≤5°C/min
  • Preheat to 80°C and maintain for 2 hours before use in low-temperature environments (<15°C)
  • Keep away from strongly corrosive media such as hydrofluoric acid
Product Gallery
비슷한 제품